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Banda Aceh, Aceh, Indonesia 23111

Sifat Listrik Kapasitor MOS dengan Oksida Strontium Titanat (SrTiO3)

Authors

  • Hadi Kurniawan Dosen Prodi Pendidikan Teknik Elektro Fakultas Tarbiyah dan Keguruan Universitas Islam Negeri Ar-raniry Banda Aceh

DOI:

https://doi.org/10.22373/crc.v1i1.305

Keywords:

Capacitance, Metal Oxide Semiconductor (MOS), Strontium Titanat (SrTiO₃), Dielectric Constanta

Abstract

Telah dilakukan pengujian pada semikonduktor kapasitor metal oksida(MOS) dengan bahan oksida Strontium Titanat (SrTiO3) yang disintesis menggunakan metode chemical bath deposition (CBD) dengan substrat silicon kristal. Oksida strontium titanat adalah oksida yang memiliki nilai dielektrisitas yang tinggi. Hasil penelitian menunjukkan bahwa deposisi lapisan oksida berada pada ketebalan 200 nm, dan didapatkan kapasitansi terbesar 304 pF pada oksida dengan ketebalan 33,34 nm dan luas substrat 0,7 cm2 Keyword : Capacitance, Metal Oxide Semiconductor (MOS), Strontium Titanat (SrTiO3), Dielectric Constanta.

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Published

2015-09-02

Issue

Vol. 1 No. 1 (2015)

Section

Articles

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